2SK4207 ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Ta = 25°C) ＋0.3 1.0 －0.25 Characteristics Symbol Rating Unit 5.45±0.2 5.4 ..
2SK433 , FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
2SK436 ,High-Frequency,Low-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta =25°C ' unitDrain-to-Source Voltage VDSS 15 VGate-to-Drain Voltage k ..
2SK439 , Silicon N-Channel MOS FET
2SK443 ,Video Camera First-Stage ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain-to-Source Voltage Vnss 15 VGate-to-Drain Voltage Ir ..
2SK447 , TECHNICAL DATA
3EZ10D5 ,SILICON ZENER DIODESMAXIMUM RATINGSL = Assembly LocationRating Symbol Value Unit3EZxxxD5 = Device CodeMax. Steady State ..
3EZ13D5 ,SILICON ZENER DIODESELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.5 V Max @ I = 200 mA for all typ ..
3EZ300D5 ,SILICON ZENER DIODESELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 1.5 V max, if: = 200 mA for all ..
3GU41 ,SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)APPLICATIONS Unit in mmRepetitive Peak Reverse Voltage: VRRM = 100--400V96.0Average Forward Current ..
3GU41 ,SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)3GU41SWITCHING TYPE POWER SUPPLY
3HN04MH , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4207
Power MOSFET (N-ch 700V<VDSS)
2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK4207 Swiching Regulator Applications
z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) High forward transfer admittance:|Yfs| = 11 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.3 mH, RG = 25 Ω, IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 4.6 g (typ.)
