2SK4115 ,Power MOSFET (N-ch 700V<VDSS)Thermal Characteristics 2Characteristic Symbol Max UnitThermal resistance, channel to case R 0.833 ..
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2SK4121LS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4121LS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4124 ,N-Channel Power MOSFET, 500V, 20A, 430mOhm, TO-3P-3LMaximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 500 VDSSGate-to-So ..
2SK413 , SILICON N-CHANNEL MOS FET
3EZ10D5 ,SILICON ZENER DIODESMAXIMUM RATINGSL = Assembly LocationRating Symbol Value Unit3EZxxxD5 = Device CodeMax. Steady State ..
3EZ13D5 ,SILICON ZENER DIODESELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.5 V Max @ I = 200 mA for all typ ..
3EZ300D5 ,SILICON ZENER DIODESELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 1.5 V max, if: = 200 mA for all ..
3GU41 ,SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)APPLICATIONS Unit in mmRepetitive Peak Reverse Voltage: VRRM = 100--400V96.0Average Forward Current ..
3GU41 ,SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)3GU41SWITCHING TYPE POWER SUPPLY
3HN04MH , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4115
Power MOSFET (N-ch 700V<VDSS)
2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ)
2SK4115 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 18.4 mH, RG = 25 Ω, IAR = 7 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 4.6 g (typ.)
