2SK4107 ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 0.833 ..
2SK4115 ,Power MOSFET (N-ch 700V<VDSS)Thermal Characteristics 2Characteristic Symbol Max UnitThermal resistance, channel to case R 0.833 ..
2SK4120LS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4121LS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4121LS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4124 ,N-Channel Power MOSFET, 500V, 20A, 430mOhm, TO-3P-3LMaximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 500 VDSSGate-to-So ..
3EZ10D5 ,SILICON ZENER DIODESMAXIMUM RATINGSL = Assembly LocationRating Symbol Value Unit3EZxxxD5 = Device CodeMax. Steady State ..
3EZ13D5 ,SILICON ZENER DIODESELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.5 V Max @ I = 200 mA for all typ ..
3EZ300D5 ,SILICON ZENER DIODESELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 1.5 V max, if: = 200 mA for all ..
3GU41 ,SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)APPLICATIONS Unit in mmRepetitive Peak Reverse Voltage: VRRM = 100--400V96.0Average Forward Current ..
3GU41 ,SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)3GU41SWITCHING TYPE POWER SUPPLY
3HN04MH , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK4107
Power MOSFET (N-ch 250V<VDSS≤500V)
2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107 Switching Regulator Applications
• Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.78 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 4.6 g (typ.)
