2SK4085LS ,N-Channel Power MOSFET, 500V, 16A, 430mOhm, TO-220F-3FSMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 500 VDS ..
2SK4086LS , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4087LS , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4088LS ,Power MOSFET 650V 11A 0.85 Ohm Nch Single TO-220F-3FSMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain to Source Voltage V 650 VDS ..
2SK4092-A , SWITCHING N-CHANNEL POWER MOS FET
2SK4096LS , N-Channel Silicon MOSFET General-Purpose Switching Device
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
3DD13007MD-O-C-N-B ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD15D , Silicon NPN Power Transistors
2SK4085LS
N-Channel Power MOSFET, 500V, 16A, 430mOhm, TO-220F-3FS
Features• ON-resistance RDS(on)=0.33Ω (typ.) • Input capacitance Ciss=1200pF (typ.) • 10V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 500 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) IDc *1 Limited only by maximum temperature Tch=150°C 16 A
IDpack *2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 11 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A
Allowable Power Dissipation PD 2.0 W
Tc=25°C (SANYO’s ideal heat dissipation condition)*3 40 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *4 EAS 141 mJ
Avalanche Current *5 IAV 16 A
*1 Shows chip capability.
*2 Package limited.
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=1mH, IAV=16A (Fig.1)
*5 L≤1mH, Single pulse
Package Dimensionsunit : mm (typ)
2SK4085LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Product & Package Information• Package : TO-220F-3FS
• JEITA, JEDEC : SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking Electrical Connection
