2SK4066 ,N-Channel Power MOSFET, 60V, 100A, 4.7mOhm, TO-262-3L/TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 60 VDSS ..
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2SK4066
N-Channel Power MOSFET, 60V, 100A, 4.7mOhm, TO-262-3L/TO-263-2L
Features• ON-resistance RDS(on)1=3.6mΩ(typ.) • Input capacitance Ciss=12500pF (typ.) • 4V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID 100 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 400 A
Allowable Power Dissipation PD 1.65 W
Tc=25°C 90 W Continued on next page.
Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7537-001 7535-001
2SK4066N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TO-263-2L
2.54 2.54
0 to 0.25
4.5 8.0
1 : Gate
2 : Drain
3 : Source
SANYO : TO-262-3L
4.5 8.0
2, 4
Product & Package Information• Package : TO-262-3L • Package : TO-263-2L
• JEITA, JEDEC : TO-262 • JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 50pcs./magazine • Minimum Packing Quantity : 800pcs./reel
Marking Packing T ype : DL Electrical Connection2SK4066-1E 2SK4066-DL-1E
