2SK405. ,Silicon N Channel MOS typeTOSHIBA FIELD EFFECT TRANSISTORSILICON N CHANNEL MOS TYPETOSHIBA (DISCRETE/OPTO)28005P l CA-CS,AUDI ..
2SK4065 ,N-Channel Power MOSFET, 75V, 100A, 6mOhm, TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 75 VDSS ..
2SK4066 ,N-Channel Power MOSFET, 60V, 100A, 4.7mOhm, TO-262-3L/TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 60 VDSS ..
2SK4070 , MOS FIELD EFFECT TRANSISTOR
2SK4070-S15-AY , MOS FIELD EFFECT TRANSISTOR
2SK4078-ZK-E1-AY , SWITCHING N-CHANNEL POWER MOS FET
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK405-2SK405.
Silicon N Channel MOS type
TOSHIBA FIELD EFFECT TRANSISTOR
SILICON N CHANNEL MOS TYPE 2SK405
TOSHIBA (DISCRETE/OPTO)
T_30I - ct,
AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm
139MAX Aaetae
FEATURES: A
if 3 :2
. High Breakdown Voltage I VD55=160V
. High Forward Transfoer Admittance t lstl=2.0S (Typ.) ( ' --' 2
. Complementary to 2SJ115 E F -7 'i'
i2, é C 'i'i l
tas :3,
545102 a451u2 -
MAXIMUM RATINGS (Ta=25°C) :1 a? g) .
CHARACTERISTIC SYMBOL RATING UNIT f, g I - 1 $3
-. 1--2--1{
Drain-Source Voltage V035 160 V f?
Gate-Source Voltage V655 -20 ll 1 GATE
Drain Current ID 8 A 2 DRAIN (HEAT SINK)
' SOURCE
Power Dissipation (Tc=25 C) PD 100 W JEDEC -
Channel Temperature Tch 150 "c EIAJ -
Storage Temperature Range Tstg -55 ~150 "c TOSHIBA 2-16CLB
Height l 4.6g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current Icss VDs=O, Vcs=i20V - - i1.0 uA
Drain-Source
Breakdwon Voltage V(BR)DSS To=5tttA, Ilcs=0 160 - - V
Gate-Source Cut-off Voltage vggégzg) VDS=10V. ID=0-1A 0.8 - 2,8 ll
Drain-Source Saturation
Volta e Vns(on) 1D--5A, VCS=10V - 2.5 7.0 v
Forward Transfer Admittance Istl VDs=lOV, ID=2A 1.0 2.0 - s
Input Capacitance Ciss VDS=10V, 1lcs=0, f=lMHz - 430 - pF
Output Capacitance Coss vDs--10v,vcs--0,f=1MHz - 260 - pF
Reverse Transfer Capacitance Crs 1l0s--10v,ilcs--0,f--1tf1lz - 80 - pF
Note ' 1/cstorr) Classification o : 0.8-t.6, Y , 1.4-2.8
DRAI N CURRENT
CAPACITANCE c (p?)
FORWARD TRANSFER ADMITTANCE
nyal (5)
ID - V05
5 COMMON SOURCE
TC = -25'C
Vos=2V
o l 8 .2 16 eo
DRAIN-SOURCE VOLTAGE vDs (V)
lYrsl - ID
COMMON SOURCE
VDS=10V
003 (11 (13 1 3 10
DRAIN CURRENT ID (A)
C - VDS
COMMON SOURCE
t=1MHa
T c = agt;
0 ao 1.0 60 80 100
DRAIN-SOURCE VOLTAGE VDS (V)
TOSHIBA (DISCRETE/OPTO) 2SK405
ID - vos
COMMON SOURCE
vDS=1ov
1D (A)
DRAIN CURRENT
C i) l 6 8 10
OATE~SOURCE VOLTAGE VOS (V)
VDS(CN) - Tc
COMMON
SOURCE
1ros--l0Y
DRAIN-SOURCE SATURATION
VDSKON)
-50 0 so 100 150 200
CASE TEMPERATURE Tc ('C)
PD - Ta
A Tc = Ta
v INFINITE HEAT SINK
o 4.0 80 120 160 200
AMBIENT TEMPERATURE Ta ('C)
1. (n6)
SWITCHING TIME
TOSHIBA (DISCRETE/OPTO)
COMMON SOURCE
RL =2!)
Tc = 25C
tdtotry
td(on)
2 l 6 8
DRAIN CURRENT ID (A)
I NPUT OUTPUT
ID (A)
UHA 1N CURRENT
28K405
SAFE OPERATING AREA
30 um TLIImIr ll
" ID MAX. (PULSE) . "
m 19m. H
RE (commuous;
. a SINGLE PULSE Tc=25'c .
CURVES MUST BE DEBATE!) ,
C13 LINERLY WITH INCREASE g
m TEMPERATURE. f?
a} Hug I t ' .m A
03 1 3 10 so 100 300
DRAIN-SOURCE VOLTAGE vos (V)
- 901,
y ------ - 10%
OUTPUT
--. _ - 10%
tstony tr ‘dtorn tr
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