2SK4021 ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Ta = 25°C) 2.3 2.3 Characteristic Symbol Rating Unit Drain−source voltage ..
2SK4022 ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Ta = 25°C) 2.3 2.3 Characteristic Symbol Rating Unit 1 2 3 Drain-sour ..
2SK4026 , Switching Regulator Applications
2SK4027 ,N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECMDATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK4027N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTO ..
2SK4033 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 6.25 ° ..
2SK4042 , Switching Regulator Applications
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK4021
Power MOSFET (N-ch 150V<VDSS≤250V)
2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK4021 Switching Regulators and DC-DC Converter Applications
Motor Drive Applications Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω, IAR = 4.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.36 g (typ.)
