2SK4017. ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 6.25 ° ..
2SK4021 ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Ta = 25°C) 2.3 2.3 Characteristic Symbol Rating Unit Drain−source voltage ..
2SK4022 ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Ta = 25°C) 2.3 2.3 Characteristic Symbol Rating Unit 1 2 3 Drain-sour ..
2SK4026 , Switching Regulator Applications
2SK4027 ,N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECMDATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK4027N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTO ..
2SK4033 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 6.25 ° ..
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK4017-2SK4017.
Power MOSFET (N-ch single 30V<VDSS≤60V)
2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive
Applications 4-V gate drive
z Low drain−source ON-resistance: RDS (ON) = 0.07 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 0.36 g (typ.)
