2SK4012 ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics 2Characteristic Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK4012 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage V 500 V ..
2SK4013 ,Power MOSFET (N-ch 700V<VDSS)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 2.78 ..
2SK4016 , Silicon N-Channel MOS Type Switching Regulator Applications
2SK4017 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) 2.3 2.3 Characteristic Symbol Rating Unit 1 2 3 Drain−sour ..
2SK4017. ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 6.25 ° ..
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3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK4012
Power MOSFET (N-ch 250V<VDSS≤500V)
2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4012 Switching Regulator Applications
z Low drain−source ON-resistance : RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 2: VDD = 90 V, Tch = 25°C (initial), L = 11.8 mH, RG = 25 Ω, IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 1.7 (typ.)
