2SK3940 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 75 V ..
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2SK3973G ,Silicon N-channel MOS FETAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit Marking Symbol: 5VDrain-source sur ..
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2SK3980 , N-Channel Silicon MOSFET General-Purpose Switching Device
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3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK3940
Power MOSFET (N-ch single 60V<VDSS≤150V)
2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII)
2SK3940 Switching Regulator, DC/DC Converter Applications
Motor Drive Applications Low drain-source ON-resistance: RDS (ON) = 5.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 75 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 135 μH, IAR = 70 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: The definition of maximum rating condition for both channel temperature and storage temperature range is
derived from AEC-Q101.
This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 4.6 g (typ.)
