2SK3934 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.5 ..
2SK3934. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.23 (typ.) DS (ON)• High forward tra ..
2SK3935 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 450 V ..
2SK3938 ,Small-signal deviceSilicon MOSFETs (Small Signal) 2SK3938Silicon N-channel MOSFETFor switching circuitsUnit: mm+0.05 + ..
2SK3940 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 75 V ..
2SK3947 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
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2SK3934-2SK3934.
MOSFET 2SK/2SJ Series
2SK3934 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3934 Switching Regulator Applications · Low drain-source ON resistance: RDS (ON) = 0.23Ω (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.16mH, IAR = 15 A, RG = 25 W
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 1.7 g (typ.)
