2SK3903 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SK3905 , Silicon N-Channel MOS Type
2SK3911 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
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2SK3918-ZK ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, a ..
2SK3919 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3919SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
3D7205M-50 , MONOLITHIC 5-TAP FIXED DELAY LINE
3DD13002 , TO-251 Plastic-Encapsulate Transistors
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3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK3903
Power MOSFET (N-ch 500V<VDSS≤700V)
2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3903 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 7.2 mH, RG = 25 Ω, IAR = 14 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 4.6 g (typ.)
