2SK389 ,N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)APPLICATIONS. Unit in mmO 1 Chin nun] Tvrvs. --_ v---r .-_- 'OSC''".L Thegltu-st..1A1 CU... M-.." T ..
2SK3899 ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) ..
2SK3900 ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) ..
2SK3903 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SK3905 , Silicon N-Channel MOS Type
2SK3911 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
3D7205M-50 , MONOLITHIC 5-TAP FIXED DELAY LINE
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK389
N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)
TOSHIBA ZSK389
TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE
ZSK389
LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. Unit in mm
o 1 Chip Dual Type.
9.5 10 3
---- -----
0 Recommended for First Differential Stages of DC Amplifiers.
0 Very High lyfsl : lYfsl=20rns(Typ.) A?P, _ l , ' I
(VDS=10V, VGS=0, f=1kHz, IDSS=3mA) owstt)i', , E .
0 Good Pair Characteristics
5.0MIN‘
7.0MIN.
1.27 10.20
0 High Breakdown Voltage : VGDS= -50V(Min.)
0 Very Low Noise : NF=O.5dB (Typ.)
2 50:0 30
t, t t
(VDS=10V, ID=1mA, RG--1kn, f=1kHz) 'd-lr-lil-as)-
1 2 3 4 5 6
o High Input Impedance .' IGSS= -1.0nA (Max.) (VGS= -30V) 7
0 Complementary to 2SJ109 ; 22$?“ 2 23%? 2
3. SOURCE1 7. DRAIN 2
4. SUBSTRATE(Note 2)
MAXIMUM RATINGS (Ta = 25°C) JEDEC -
CHARACTERISTIC SYMBOL RATING UNIT EIAJ -
TOSHIBA 2-10M1A
Gate-Drain Voltage VGDS -50 V Weight : 0.37g (Typ.)
Gate Current 1G 10 mA
Drain Power Dissipation PD 200 mW
Junction Temperature Ti 125 T
Storage Temperature Range Tstg -55-125 'C
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the aptplications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-04-10 1/5
TOSHIBA ZSK389
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Cut-off Current IGSS VGS= -30V, VDS =0 - - - 1.0 nA
Gate-Drain Breakdown
Voltage V (BR) GDS VDS=0, IG-- -100PA -50 - - V
Drain Current IDSS (Note 1) VDS-- 10V, VGS=0 2.6 - 20 mA
Drain Current Ratio IDSS / IDSS VDS = 10V, VGS = 0 0.9 - - -
(small) (large)
Gate-Source Cut-off Voltage VGS (OFF) VDS = 10V, ID = 0.1PA - 0.15 - - 2.0 V
Forward Transfer VDS = 10V, VGS = 0
Admittance lYfSI f-- lkHz, IDSS = 3mA 8 20 - mS
Forward Transfer |st| / lyfsl VDS = 10V, VGS = o, 0 9
Admittance Ratio (small) (large) f = lkHz . - - -
Differential Gate-Source
Voltage Ivan -VGSZI VDS - 10V, ID - lmA - - 20 mV
. . V133: 10V, VGS=0,
Input Capacitance Ciss f= lMHz - 25 - pF
Reverse Transfer VGD = - 10V, ID = o,
Capacitance Crss f = lMHz - 5.5 - pF
NF (1) VDs=10V, RG=1kQ - 1.5 10 dB
. . ID = 1mA, f-- 10Hz
Noise Figure V 10V R lkn
DS = , G = -
NF (2) ID = 1mA, f-- lkHz 0.5 2 dB
Note 1 : IDSS Classification GR : 2.6--6.5mA, BL : 6--12mA, V : 10--20mA
Note 2 : Use the substrate lead with open.
1997-04-10 2/5
TOSHIBA ZSK389
STATIC CHARACTERISTICS 16 ID - VDS (LOW VOLTAGE REGION)
i COMMON SOURCE MMON SOURCE
v Ta=25°C 2 =25°C VGs=0V
o g -0.2
g z -0.8
VDs=10V © -0.4
-0.6 -0.4 -0.2 o 10 20 30 40 0 2 4 6 8 10
GATE-SOURCE DRAIN-SOURCE VOLTAGE DRAIN-SOURCE VOLTAGE VDs (V)
VOLTAGE VGS (V) VDS (V)
ID - VGS lstl - ID
COMMON SOURCE m
VDs=10V A a IDss=9.2mA
Ta=25°C E < "
12 v E 30 5'1/
Fs n: a /
Z n: v _2 0
8 E tr- 20
J 6.1 o M-
IDSS-9.2mA A, E S / COMMON SOURCE
Il 2 4 iii 5% IO / VDS=10V
/ AC. / E f=1kHz
" 95/ a. Tu=25°C
"et'' / 0 0
-L6 -L2 -0.8 -0.4 o 0 4 8 12 16
GATE-SOURCE VOLTAGE VGs (V) DRAIN CURRENT ID (mA)
50 (Yfsl - IDSS VGS (OFF) - IDss
S // 8 /
'li' / >, -0.5 "--" I
<8 E3 ,/ COMMON SOURCE
E g COMMON SOURCE Ea
_ I : v =1ov
E72 _,,.,.,.,----"''' IDss :VDs=10V ie ES -0.3 DSS DS
EB: VGs-O 8 3 VGs=0
F . - 95>
© 10 lstl .VDS_10v i? VGS(OFF) : VDS=10V
5:: VGS=0 , ID=0.1 A
t f=1kHz ti . "
E 6 Ta=25°C o Ta=25°C
1 3 10 30 "I, 3 10 30
DRAIN CURRENT IDss (mA) DRAIN CURRENT IDSS (KIA)
1997-04-10 3/5
TOSHIBA
REVERSE TRACNSFER CAPACITANCE
1Gsx (A)
GATE EXCESS CURRENT
NOISE FIGURE NF ((18)
Crss - VGD
COMMON SOURCE
ID = 0
f = lMHz
Ta = 25°C
-0.3 -1 - 3 - 10 -30
GATE-DRAIN VOLTAGE VGD (V)
IGSX - VDS
50n COMMON SOURCE
ID=10mA
30n Ta=25°C
10n GSX/
8 12 16 20 24 28 32
DRAIN-SOURCE VOLTAGE VDS (V)
NF - ID
COMMON SOURCE
VDS: 10V
RG = 1kQ
Ta=25°C
0 2 4 6 8 10
DRAIN CURRENT ID (mA)
INPUT CAPACITANCE ciss (pF)
EQUIVALENT INPUT N ISE VOLTAGE
En (nV/
NOISE FIGURE NF (dB)
ZSK389
Ciss - VDS
COMMON SOURCE
VGS = 0
f-- IMHz
Ta = 25°C
0.3 l 3 10 30 60
DRAIN-SOURCE VOLTAGE VDS (V)
En - I D
COMMON SOURCE
VDS -- 10v
's, f-- 1kHz
Ta = 25°C
1 .0 "ss.
'ss......
0.1 0.3 1 3 10
DRAIN CURRENT ID (mA)
NF - VDS
COMMON SOURCE
ID = 1mA
RG = 1kQ
Ta = 25"C
0 10 2O 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
1997-04-10 4/5
TOSHIBA ZSK389
NF - RG NF - f
COMMON SOURCE COMMON SOURCE
VDS= 10V VDs=10V
(i)] ID = 1mA 'r':'.)' ID = 1mA
B. Ta = 25°C in Ta = 25°C
El 5'}
S? S?,
h: EL.
tel ap
100 1k 10k 100k 1M 10 100 1k 10k 100k
SIGNAL SOURCE RESISTANCE RC, (CI) FREQUENCY f (Hz)
1997-04-10 5/5
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