2SK3880 ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 800 ..
2SK389 ,N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)APPLICATIONS. Unit in mmO 1 Chin nun] Tvrvs. --_ v---r .-_- 'OSC''".L Thegltu-st..1A1 CU... M-.." T ..
2SK3899 ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) ..
2SK3900 ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) ..
2SK3903 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SK3905 , Silicon N-Channel MOS Type
3D7205M-50 , MONOLITHIC 5-TAP FIXED DELAY LINE
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK3880
Power MOSFET (N-ch 700V<VDSS)
2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3880 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 5.8 g (typ.)
