2SK3878 ,Power MOSFET (N-ch 700V<VDSS)Thermal Characteristics 2Characteristic Symbol Max UnitThermal resistance, channel to case R 0.833 ..
2SK3879 , Silicon N-Channel MOS Type Switching Regulator Applications
2SK3879 , Silicon N-Channel MOS Type Switching Regulator Applications
2SK3880 ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 800 ..
2SK389 ,N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)APPLICATIONS. Unit in mmO 1 Chin nun] Tvrvs. --_ v---r .-_- 'OSC''".L Thegltu-st..1A1 CU... M-.." T ..
2SK3899 ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) ..
3D7205M-50 , MONOLITHIC 5-TAP FIXED DELAY LINE
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK3878
Power MOSFET (N-ch 700V<VDSS)
2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
2SK3878 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 17.6 mH, RG = 25 Ω, IAR = 9 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 4.6 g (typ.)
