2SK3868 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 3.5 ..
2SK3869 ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics 2Characteristic Symbol Max UnitThermal resistance, channel to case R 3.125 ..
2SK3878 ,Power MOSFET (N-ch 700V<VDSS)Thermal Characteristics 2Characteristic Symbol Max UnitThermal resistance, channel to case R 0.833 ..
2SK3879 , Silicon N-Channel MOS Type Switching Regulator Applications
2SK3879 , Silicon N-Channel MOS Type Switching Regulator Applications
2SK3880 ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 800 ..
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3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK3868
MOSFET 2SK/2SJ Series
2SK3868 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI)
2SK3868 Switching Regulator Applications · Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 12.2 mH, IAR = 5 A, RG = 25 W
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 1.7 g (typ.)
