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2SK3845
Power MOSFET (N-ch single 30V<VDSS≤60V)
2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3845 Switching Regulator, DC-DC Converter Applications and
Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.) High forward transfer admittance: |Yfs| = 88 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 91 μH, RG = 25 Ω, IAR = 70 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight: 4.6 g (typ.)
