2SK3844 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 60 V ..
2SK3845 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 60 V ..
2SK385 , 2SK385
2SK386 , 2SK386
2SK3863 , Silicon N-Channel MOS Type Switching Regulator Applications
2SK3866 ,Silicon N-channel junction FETAbsolute Maximum Ratings T = 25°Ca 2: Source 3: GateParameter Symbol Rating UnitDrain-source volta ..
3CA1837 , TRANSISTOR (PNP)
3D7205M-50 , MONOLITHIC 5-TAP FIXED DELAY LINE
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
2SK3844
Power MOSFET (N-ch single 30V<VDSS≤60V)
2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
2SK3844 Switching Regulator, DC-DC Converter Applications
Motor Drive Applications Low drain-source ON-resistance: RDS (ON) = 4.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 63 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 353 μH, IAR = 45 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
