2SK3797 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.6 ..
2SK3797. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.32 (typ.) DS (ON)• High forward tr ..
2SK3798 ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 2.5Ω (typ.) DS (ON)• High forward tra ..
2SK3799 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R (2. ..
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2SK3797-2SK3797.
MOSFET 2SK/2SJ Series
2SK3797 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3797 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta === = 25°C)
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 7.8mH, IAR = 13 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 1.7 g (typ.)
