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2SK3767
MOSFET 2SK/2SJ Series
2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C（initial））, L = 41mH, RG = 25 Ω , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight : 1.7 g (typ.)
