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2SK3747 ,N-Channel Power MOSFET, 1500V, 2A, 13Ohm, TO-3PF-3LAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK3749 ,Nch enhancement type MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3749N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE D ..
2SK375 , HIGH SPEED POWER SWITCHING
2SK375 , HIGH SPEED POWER SWITCHING
2SK3755 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3755SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERIN ..
3CA1837 , TRANSISTOR (PNP)
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3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
2SK3742
Power MOSFET (N-ch 700V<VDSS)
2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3742 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 mH, IAR = 5.0 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 1.7 g (typ.)
