2SK3700 ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 900 ..
2SK3702 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK3702JS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3702JS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3703 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK3704 ,N-Channel MOSFET for General Purpose Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3BZ41 ,RECTIFIER SILICON DIFFUSED TYPE (GENERAL PURPOSE RECTIFIER APPLICATIONS)APPLICATIONS. Unit in mmA vn'm m: Fnrwn rd Cm rrnn f.. TDIA‘T\=3 0Ar921kPCCCF.1CCF llll k?«11) \ >4 ..
3CA1837 , TRANSISTOR (PNP)
3D7205M-50 , MONOLITHIC 5-TAP FIXED DELAY LINE
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
2SK3700
Power MOSFET (N-ch 700V<VDSS)
2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK3700 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 25.7mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight: 4.6 g (typ.)
