2SK3670 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 150 ..
2SK3670 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
2SK3673-01MR , N-CHANNEL SILICON POWER MOSFET
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2SK3681-01 , N-CHANNEL SILICON POWER MOSFET
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
3B20-01 ,Non-Isolated AC Strain or Torque Input Signal Conditioning ModuleGENERAL DESCRIPTION selecting resistors, a Windows program, 3B-CUSTOM, The 3B20 is a wideband sin ..
3B41 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Moduleapplications requiring simultaneous precision voltage and current outputs. Each high-resolution mea ..
3B41-03 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be linearize and convert the transducer o ..
2SK3670
Power MOSFET (N-ch single 60V<VDSS≤150V)
2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3670 Chopper Regulator and DC−DC Converter Applications
z 2.5V-Gate Drive Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) Enhancement mode: Vth = 0.5 to 1.3 V (VDS = 10 V, ID =200 μA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDS = 50V、Tch = 25°C(initial)、L = 135mH、IAR = 0.67A、RG = 25Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)
