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2SK3669
Field Effect Transistor Silicon N Channel MOS Type (PI-MOS VII) Switching Regulators, for Audio Amplifier and Motor Drive Applications
2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
2SK3669 Switching Regulators, for Audio Amplifier and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD � 50 V, Tch � 25°C (initial), L � 3.44 mH, IAR � 10 A, RG � 25 �
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)
