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2SK3667
MOSFET 2SK/2SJ Series
2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3667 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.74Ω (typ.) High forward transfer admittance: |Yfs| = S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta === = 25°C)
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = TBD mH, IAR = 3.5 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
unit：ｍｍ
