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2SK3662 from TOSHIBA

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15.625ms

2SK3662

Manufacturer: TOSHIBA

Field Effect Transistor Silicon N Channel MOS Type (PI-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

Partnumber Manufacturer Quantity Availability
2SK3662 TOSHIBA 100 In Stock

Description and Introduction

Field Effect Transistor Silicon N Channel MOS Type (PI-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications The part number 2SK3662 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. Below are the key specifications for the 2SK3662 MOSFET:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (Vds)**: 600V
- **Drain Current (Id)**: 10A
- **Power Dissipation (Pd)**: 50W
- **Gate-Source Voltage (Vgs)**: ±30V
- **On-Resistance (Rds(on))**: 0.45Ω (typical)
- **Input Capacitance (Ciss)**: 1200pF (typical)
- **Output Capacitance (Coss)**: 200pF (typical)
- **Reverse Transfer Capacitance (Crss)**: 20pF (typical)
- **Turn-On Delay Time (td(on))**: 15ns (typical)
- **Turn-Off Delay Time (td(off))**: 50ns (typical)
- **Package**: TO-220SIS

These specifications are based on typical operating conditions and may vary slightly depending on the specific application and environment.

Partnumber Manufacturer Quantity Availability
2SK3662 ,2SK3662 TOS 250 In Stock

Description and Introduction

Field Effect Transistor Silicon N Channel MOS Type (PI-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications The **2SK3662** from **TOSHIBA** is a high-performance N-channel **MOSFET** designed for efficient power management in a variety of electronic applications. Known for its low on-state resistance and high-speed switching capabilities, this component is well-suited for power supply circuits, DC-DC converters, and motor control systems.  

With a **drain-source voltage (VDSS)** rating of **60V** and a **continuous drain current (ID)** of **30A**, the 2SK3662 offers robust performance in demanding environments. Its low **RDS(on)** ensures minimal power dissipation, improving overall system efficiency. Additionally, the MOSFET features a compact **TO-220SIS** package, making it suitable for space-constrained designs while maintaining effective thermal management.  

Engineers favor the 2SK3662 for its fast switching characteristics, which reduce switching losses in high-frequency applications. The device also incorporates built-in protection against **electrostatic discharge (ESD)**, enhancing reliability in real-world operating conditions.  

Whether used in industrial automation, automotive electronics, or consumer power solutions, the 2SK3662 delivers a balance of performance, efficiency, and durability, making it a dependable choice for modern power electronics.

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