2SK3658 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 60 V ..
2SK3659 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitZer ..
2SK3662 ,Field Effect Transistor Silicon N Channel MOS Type (PI-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 3.57 ° ..
2SK3662 ,Field Effect Transistor Silicon N Channel MOS Type (PI-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive ApplicationsApplications Low drain-source ON resistance: R = 9.4 mΩ (typ.) DS (ON) High forward transf ..
2SK3663 , N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
2SK3664 ,N-Channel enhancement MOS FET for load swFEATURES • 2.5 V drive available 2 1• Low on-state resistance +0.10.2–0 RDS(on)1 = 0.57 Ω MAX. (VGS ..
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
3B20-01 ,Non-Isolated AC Strain or Torque Input Signal Conditioning ModuleGENERAL DESCRIPTION selecting resistors, a Windows program, 3B-CUSTOM, The 3B20 is a wideband sin ..
3B41 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Moduleapplications requiring simultaneous precision voltage and current outputs. Each high-resolution mea ..
3B41-03 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be linearize and convert the transducer o ..
2SK3658
Power MOSFET (N-ch single 30V<VDSS≤60V)
2SK3658 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSV)
2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) Enhancement−mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C) Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics This transistor is an electrostatic sensitive device.
Please handle with caution.
Marking Week of manufacture
Year of manufacture: last decimal digit of the year of manufacture
Lot no.
Product no. (abbr.)
Unit: mm
Weight: 0.05 g (typ.)
