2SK363 ,N-Channel silicon junction field-effect transistorApplications High breakdown voltage: V = −40 V GDS High input impedance: I = −1.0 nA (max) ..
2SK3635-Z ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(o ..
2SK3636 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitDrain-source ..
2SK3637 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitGate-drain s ..
2SK3638 ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low PART NUMBER PACKAGE on-state resistance and excellent switching characteristics, an ..
2SK3639 ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low on-state resistance and excellent switching 2SK3639-ZK characteristics, and designed ..
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
3B20-01 ,Non-Isolated AC Strain or Torque Input Signal Conditioning ModuleGENERAL DESCRIPTION selecting resistors, a Windows program, 3B-CUSTOM, The 3B20 is a wideband sin ..
3B41 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Moduleapplications requiring simultaneous precision voltage and current outputs. Each high-resolution mea ..
3B41-03 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be linearize and convert the transducer o ..
2SK363
N-Channel silicon junction field-effect transistor
2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications High breakdown voltage: VGDS = −40 V High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) RDS (ON) VDS � 10 mV, VGS � 0 (Note 2)
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Condition of the typical value IDSS � 15 mA
Unit: mm
Weight: 0.21 g (typ.)
