2SK3611-01MR ,N-CHANNEL SILICON POWER MOSFETFeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche ..
2SK3614 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK3615 , General-Purpose Switching Device Applications
2SK3617 ,Medium Output MOSFETsOrdering number : ENN8112 2SK3617N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3617App ..
2SK3628 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitGate-drain s ..
2SK363 ,N-Channel silicon junction field-effect transistorApplications High breakdown voltage: V = −40 V GDS High input impedance: I = −1.0 nA (max) ..
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
3B20-01 ,Non-Isolated AC Strain or Torque Input Signal Conditioning ModuleGENERAL DESCRIPTION selecting resistors, a Windows program, 3B-CUSTOM, The 3B20 is a wideband sin ..
3B41 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Moduleapplications requiring simultaneous precision voltage and current outputs. Each high-resolution mea ..
3B41-03 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be linearize and convert the transducer o ..
2SK3611-2SK3611-01MR
