2SK3569 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.7 ..
2SK3569. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.54 (typ.) DS (ON)• High forward tr ..
2SK357 , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
2SK357 , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
2SK357. , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
2SK3570 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3570SWITCHINGN-CHANNEL POWER MOS FET
2SK3569-2SK3569.
MOSFET 2SK/2SJ Series
2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3569 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta === = 25°C)
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 6.36 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight : 1.7 g (typ.)
