2SK3568 ,Power MOSFET (N-ch 250V<VDSS≤500V)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 3.125 ..
2SK3568.. ,Power MOSFET (N-ch 250V<VDSS≤500V)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
2SK3569 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.7 ..
2SK3569. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.54 (typ.) DS (ON)• High forward tr ..
2SK357 , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
2SK357 , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
3B20-01 ,Non-Isolated AC Strain or Torque Input Signal Conditioning ModuleGENERAL DESCRIPTION selecting resistors, a Windows program, 3B-CUSTOM, The 3B20 is a wideband sin ..
3B41 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Moduleapplications requiring simultaneous precision voltage and current outputs. Each high-resolution mea ..
3B41-03 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be linearize and convert the transducer o ..
2SK3568-2SK3568..
Power MOSFET (N-ch 250V<VDSS≤500V)
2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3568 Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.3 mH, IAR = 12 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Weight : 1.7 g (typ.)
