2SK3562 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit2 Thermal resistance, channel to case R 3.12 ..
2SK3563 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.57 ..
2SK3563.. ,MOSFET 2SK/2SJ SeriesApplications 10±0.3 2.7±0.2 φ3.2±0.2• Low drain-source ON resistance: R = 1.35Ω (typ.) DS (ON)• Hi ..
2SK3564 ,MOSFET 2SK/2SJ SeriesApplications 10±0.3 2.7±0.2 φ3.2±0.2 • Low drain-source ON resistance: R = 3.7 (typ.) DS (ON)• Hi ..
2SK3565 ,MOSFET 2SK/2SJ SeriesThermal Characteristics 2Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK3566 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.12 ..
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2SK3562
MOSFET 2SK/2SJ Series
2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3562 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 16.8 mH, IAR = 6 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
Weight : 1.7 g (typ.)
