2SK3499 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive ApplicationsApplications Low drain-source ON resistance: R = 0.4 Ω (typ.) DS (ON) High forward transfer ..
2SK3502 ,N CHANNEL SILICON POWER MOSETFUJI POWER MOSFET2SK3502-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline DrawingsTO-220F
2SK3502-01MR , N-CHANNEL SILICON POWER MOSFET
2SK3503 ,N Channel enhancement MOS FETFEATURES 0 to 0.1• Automatic mounting supported 2 1• Gate can be driven by a 1.5 V power source +0. ..
2SK3503-T1 ,N Channel enhancement MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZe ..
2SK3505 ,N CHANNEL SILICON POWER MOSFETFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofA ..
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
3B20-01 ,Non-Isolated AC Strain or Torque Input Signal Conditioning ModuleGENERAL DESCRIPTION selecting resistors, a Windows program, 3B-CUSTOM, The 3B20 is a wideband sin ..
2SK3499
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3499 Switching Regulator and DC-DC Converter Applications
Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 400 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD � 90 V, Tch � 25°C (initial), L � 5.85 mH, RG � 25 �,
IAR � 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.74 g (typ.)
Circuit Configuration