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2SK3475
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3475 VHF- and UHF-band Amplifier Applications Output power: PO = 630 mW (min) Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min)
Maximum Ratings (Ta = 25°C) Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Caution Please take care to avoid generating static electricity when handling this transistor.
Unit: mmType name
2 3
1. Gate
2. Source
3. Drain
