2SK3471 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter ApplicationsApplications Unit: mm Low drain-source ON resistance: R = 10 Ω (typ.) DS (ON) High forward t ..
2SK3473 ,Power MOSFET (N-ch 700V<VDSS)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 0.833 ..
2SK3475 ,Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier ApplicationsApplications Unit: mm Output power: P = 630 mW (min) O Gain: G = 14.9dB (min) P Drain ef ..
2sk3476 ,Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier ApplicationsApplications Unit: mm Output power: P = 7.0 W (min) O Gain: G = 11.4dB (min) P Drain e ..
2SK3479 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3480 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
3B20-01 ,Non-Isolated AC Strain or Torque Input Signal Conditioning ModuleGENERAL DESCRIPTION selecting resistors, a Windows program, 3B-CUSTOM, The 3B20 is a wideband sin ..
2SK3471
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications
2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3471 Switching Regulator and DC-DC Converter Applications Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm � 25.4 mm � 0.8 mm)
Note 3: VDD � 90 V, Tch � 25°C (initial), L � 100 mH, RG � 25 �, IAR �
0.5 A
Note 4: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.05 g (typ.)
Marking (The two digits represent the
part number.)
