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2SK3462
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications
2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3462 Switching Regulator, DC-DC Converter and Motor Drive Applications 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 250 V) Enhancement-mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature
is below 150°C.
Note 2: VDD � 50 V, Tch � 25°C, L � 6.7 mH, IAR � 3 A, RG � 25 �
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.36 g (typ.)
