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2SK3442
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442 Switching Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) High forward transfer admittance: �Yfs� = 28 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 100 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2 VDD � 25 V, Tch � 25°C (initial), L � 373 �H, RG � 25 �, IAR � 45 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.74 g (typ.)
