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2SK3441
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (U-MOSII) RELAY DRYVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3441 DC-DC Converter
Relay Drive and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD � 25 V, Tch � 25°C (initial), L � 113 �H, RG � 25 �,
IAR � 75 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.74 g (typ.)
Circuit Configuration
