2SK3407 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsApplications Unit: mm Low drain-source ON resistance: R = 0.48 Ω (typ.) DS (ON) High forwar ..
2SK3407 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsThermal Characteristics Characteristics Symbol Max UnitThermal resistance, channel to case R 3.125 ..
2SK3408 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12• Can be driven by a 4-V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 195 ..
2SK3415LS ,N-Channel Silicon MOSFET DC / DC Converter, Motor Driver ApplicationsAbsolute Maximum Ratings at Ta=25°C SANYO : TO-220FI(LS)Parameter Symbol Conditions Ratings UnitDra ..
2SK3416 ,Medium Output MOSFETsFeatures Package Dimensions• Low ON-resistance.unit : mm•Ultrahigh-speed switcing.2083B•4V drive.[2 ..
2SK3424 ,Power MOS FETELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
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3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
2SK3407
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications
2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3407 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD � 90 V, Tch � 25°C (initial), L � 3.7 mH, RG � 25 �, IAR � 10 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
