2SK3403 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsApplications Unit: mm Low drain-source ON resistance: R = 0.29 Ω (typ.) DS (ON) High forward ..
2SK3404 ,Power MOS FETELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
2SK3405 ,Power MOS FETELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
2SK3405-ZK ,Power MOS FETFEATURES• 4.5-V drive available• Low on-state resistanceRDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 ..
2SK3407 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsApplications Unit: mm Low drain-source ON resistance: R = 0.48 Ω (typ.) DS (ON) High forwar ..
2SK3407 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsThermal Characteristics Characteristics Symbol Max UnitThermal resistance, channel to case R 3.125 ..
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
2SK3403
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications
2SK3403 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3403 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use device on condition that the channel temperature is
below 150°C.
Note 2: VDD � 90 V, Tch � 25°C (initial), L � 3.46 mH, RG � 25 �,
IAR � 13 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 1.5 g (typ.)
Weight: 1.5 g (typ.)
