2SK3398 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive ApplicationsApplications Low drain-source ON resistance: R = 0.4 mΩ (typ.) DS (ON) High forward transfe ..
2SK3399 ,SWITCHING REGULATOR APPLICATIONSApplicationsUnit in mm. Low drain-source ON resistance: RDS (0N) = 0.54 n (typ). High forward trana ..
2SK3402 ,Nch power MOS FET
2SK3403 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsApplications Unit: mm Low drain-source ON resistance: R = 0.29 Ω (typ.) DS (ON) High forward ..
2SK3404 ,Power MOS FETELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
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39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
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3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
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2SK3398
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD � 90 V, Tch � 25°C (initial), L � 5.85 mH, RG � 25 �,
IAR � 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.74 g (typ.)
Circuit Configuration
