2SK3373 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive ApplicationsApplications Low drain-source ON resistance: R = 2.9 mΩ (typ.) DS (ON) High forward transfe ..
2SK3373 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max UnitThermal resistance, channel to case R 6.25 ° ..
2SK3377-Z ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3378 , Silicon N Channel MOS FET High Speed Switching
2SK3378 , Silicon N Channel MOS FET High Speed Switching
2SK3378ENTL-E , Silicon N Channel MOS FET High Speed Switching
39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
2SK3373
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SK3373 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3373 Switching Regulator and DC-DC Converter Applications
Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) High forward transfer admittance: |Yfs| = 1.7 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD � 90 V, Tch � 25°C (initial), L � 48.4 mH, RG � 25 �, IAR � 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)
