2SK3342 ,Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV) Switching Regulator Applications DC .DC Converter, and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 0.8 Ω (typ.) DS (ON)High forward transfer ..
2SK3348 , Silicon N Channel MOS FET High Speed Switching
2SK3353 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES2SK3353-Z TO-220SMD• Super low on-state resistance:★ RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID ..
2SK3354 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES2SK3354-Z TO-220SMD• Super low on-state resistance:★ RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID ..
2SK3355 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES2SK3355-ZJ TO-263• Super low on-state resistance:NoteTO-220SMD2SK3355-ZRDS(on)1 = 5.8 mΩ MA ..
2SK3355-Z ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
39VF040 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
2SK3342
Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV) Switching Regulator Applications DC .DC Converter, and Motor Drive Applications
2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3342 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 250 V) Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 125
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω, IAR = 4.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)
