2SK3316 ,Field Effect TransistorApplications Unit: mm Fast reverse recovery time : t = 60 ns (typ.) rrBuilt−in high−speed fre ..
2SK3316 ,Field Effect TransistorThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.57 ..
2SK3316 ,Field Effect Transistor2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3316 Switching R ..
2SK332 ,SILICON N CHANNEL TRANSISTOR2$K332No. 9 569031"ip"):rVNrir:tsMtr4ali'l%asi=ltBhaler.vipz,gassstafslli)1is,',i'sts''tiEtte . ',M ..
2SK332 ,SILICON N CHANNEL TRANSISTOR2$K332No. 9 569031"ip"):rVNrir:tsMtr4ali'l%asi=ltBhaler.vipz,gassstafslli)1is,',i'sts''tiEtte . ',M ..
2SK332 ,SILICON N CHANNEL TRANSISTOR2$K332No. 9 569031"ip"):rVNrir:tsMtr4ali'l%asi=ltBhaler.vipz,gassstafslli)1is,',i'sts''tiEtte . ',M ..
39-01-2060 , 4.20mm (.165") Pitch Mini-Fit Jr.™ Receptacle Housing, Dual Row, UL 94V-2, 6 Circuits
39-01-2105 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-0, 10 Circuits
39-01-2140 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-2, 14 Circuits
39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
2SK3316
Field Effect Transistor
2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3316 Switching Regulator Applications Fast reverse recovery time : trr = 60 ns (typ.) Built−in high−speed free−wheeling diode Low drain−source ON resistance : RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 500 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C) Tstg
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
