2SK3310 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsApplications Unit: mm Low drain-source ON resistance: R = 0.48 Ω (typ.) DS (ON) High forwar ..
2SK3313 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.125 ..
2SK3313 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Fast reverse recovery time : t = 90 ns (typ.) rrBuilt−in high−speed free−wheeli ..
2SK3314 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Fast reverse recovery time : t = 105 ns (typ.) rrBuilt−in high−speed free−wheeli ..
2SK3316 ,Field Effect TransistorApplications Unit: mm Fast reverse recovery time : t = 60 ns (typ.) rrBuilt−in high−speed fre ..
2SK3316 ,Field Effect TransistorThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.57 ..
39-01-2060 , 4.20mm (.165") Pitch Mini-Fit Jr.™ Receptacle Housing, Dual Row, UL 94V-2, 6 Circuits
39-01-2105 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-0, 10 Circuits
39-01-2140 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-2, 14 Circuits
39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
2SK3310
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications
2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3310 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 3.0~5.0 V (VDS = 10 V , ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD � 90 V, Tch � 25°C (initial), L � 3.7 mH, RG � 25 �, IAR � 10 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
