2SK3302 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, DC-DC Converter ApplicationsApplications Unit: mm Low drain-source ON resistance: R = 11.5 Ω (typ.) DS (ON) High forwar ..
2SK3304 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
2SK3305 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
2SK3305. ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low gate charge:(TO-220AB)QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)• Gate vol ..
2SK3306 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONSDS ..
2SK3310 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsApplications Unit: mm Low drain-source ON resistance: R = 0.48 Ω (typ.) DS (ON) High forwar ..
39-01-2060 , 4.20mm (.165") Pitch Mini-Fit Jr.™ Receptacle Housing, Dual Row, UL 94V-2, 6 Circuits
39-01-2105 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-0, 10 Circuits
39-01-2140 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-2, 14 Circuits
39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
2SK3302
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, DC-DC Converter Applications
2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3302 Switching Regulator, DC-DC Converter Applications Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V , ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devise on condition that the channel temperature is below 150°C.
Note 2: VDD � 90 V, Tch � 25°C, L � 100 mH, RG � 25 �, IAR � 0.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
