2SK3301 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator, DC .DC Converter ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITGateLeakagecurrentl1 ..
2SK3302 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, DC-DC Converter ApplicationsApplications Unit: mm Low drain-source ON resistance: R = 11.5 Ω (typ.) DS (ON) High forwar ..
2SK3304 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
2SK3305 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
2SK3305. ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low gate charge:(TO-220AB)QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)• Gate vol ..
2SK3306 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONSDS ..
39-01-2060 , 4.20mm (.165") Pitch Mini-Fit Jr.™ Receptacle Housing, Dual Row, UL 94V-2, 6 Circuits
39-01-2105 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-0, 10 Circuits
39-01-2140 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-2, 14 Circuits
39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
2SK3301
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator, DC .DC Converter Applications
TOSHIBA 2SK3301
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (n-MOSIII)
2SK3301
SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS Unit in mm
E.SMAX. é
5.2t0.2 I ji. B.6MAX.
0 Low Drain-Source ON Resistance : RDS(ON) = 15 n (Typ.) '_,
0 High Forward Transfer Admittance : Istl = 0.65 S (Typ.) Cj.
0 Low Leakage Current : IDSS = 100 PA (Max.) (VDS = 720V) OBSMAX, g
06:0. 3 Jh6lr-tiAh.
0 Enhancement-Mode : Vth = 2.4--3.4V 15 -'-_i]
(VDS = 10 V, ID = 1mA) x.
MAXIMUM RATINGS (Ta = 25°C) :7
CHARACTERISTIC SYMBOL RATING UNIT l. GATE 2
2. DRAIN l
Drain-Source Voltage VDSS 900 V (HEAT SINK) _@
Drain-Gate Voltage (RGS = 20 k0) VDGR 900 V l SOURCE 3
Gate-Source Voltage VGSS i30 V JEDEC -
D 1 I 1 A
DCDrain Current PCI (Eote 1) ID 2 A JEITA SC-64
u se ( ote ) DP TOSHIBA 2-7B1B
Drain Power Dissipation (Tc = 25°C) PD 20 W W . h 36 T
Single Pulse Avalanche Energy E 140 m J e1g t . o. g ( hyp.)
(Note 2) AS 6.8MAX. g
Avalanche Current IAR 1 A m! , ~H-m
Repetitive Avalanche Energy —; 'g
(Note 3) EAR 2.0 mJ Cj. C,)
Channel Temperature Tch 150 T WEE] —2_
o 0.6t0.15 _
Storage Temperature Range Tstg -55--150 C t 2G 0.6MAX.
THERMAL CHARACTERISTICS I
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case Rth(ch-c) 6.25 "C/ W
Thermal Resistance, Channel to Ambient Rth(ch-a) 125 "C/ W 1. GATE 1 2
2. DRAIN
. . . (HEAT SINK)
(Note 1) : Please use devices on condition that the channel 3. SOURCE 3
temperature is below 150°C.
(Note 2) : VDD = 90 V, Tch = 25°C (initial), L = 257 mH JEDEC -
RG = 25 n, IAR = IA JEITA -
(Note 3) .' Repetitive rating ; Pulse Width Limited by Max. TOSHIBA 2-7B3B
junction temperature. Weigh t : 0. 3 6g (Typ.)
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-08-12
TOSHIBA 2SK3301
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = ur30 V, VDS = 0 V - - i 10 PA
Gate-Source Breakdown
= + = + - -
Voltage V (BR) GSS IG - 10 PA, VDS 0 V - 30 V
Drain Cut-off Current IDSS VDS = 720V, VGS = 0V - - 100 pA
Drain-Source Breakdown
Voltage V (BR) DSS ID - 10 mA, VGS - 0V 900 - - V
Gate Threshold Voltage Vth VDS = 10V, ID = 1 mA 2.4 - 3.4 V
Drain-Source ON Resistance RDS (ON) VGS = 10V, ID = 0.5 A - 15 20 n
Forward Transfer
Admittance Istl VDS - 10V, ID - 0.5 A 0.3 0.65 - S
Input Capacitance Ciss 165
Reverse Transfer C VDS = 25 V, VGS = 0 V, 6 F
Capacitance rss f = 1 MHz - 21 - p
Output Capacitance Coss - -
Rise Time tr 10 ,v,rl. ID=0. 5 A VOUT - 15 -
GS O Vn
Turn-on Time ton - 60 -
Switching g - lu, n ns
Time Fall Time tf 19 - 40 -
VDD= 400 V
Turn-off Time toff DutyS 1%, tw-- - 10 [us - 110 -
Total Gate Charge (Gate- a - 6 -
Source Plus Gate-Drain) g VDD = 400 V, VGS = 10 V, C
Gate-Source Charge Qgs ID = IA - 3 - n
Gate-Drain ("Miller") Charge di - 3 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse I 1 A
Current (Note 1) DR
Pulse Drain Reverse Current I 2 A
(Note 1) DRP - - -
Forward Voltage (Diode) VDSF IDR = 1 A, VGS = O V - - -1.7 V
Reverse Recovery Time trr IDR = 1 A, VGS = 0 V - 1300 - ns
Reverse Recovery Charge er dIDR/ dt = 100 A/ gs - 1.95 - PC
MARKING
.)K. Lot Number
K3301--- TYPE
I I Cl- Month (Starting from Alphabet A)
L] U U Year (Last Number of the Christian Era)
2 2002-08-12
TOSHIBA 2SK3301
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2002-08-12
:
www.loq.com
.
