2SK3265 ,MOSFET 2SK/2SJ SeriesAPPLICATIONS_1010.3 ' (#32102 2,7ur0.20 Low Drain-Source ON Resistance : RDS(ON) = 0.72 fl (Typ.)0 ..
2SK3268 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitDrain-source ..
2SK3272-01S ,N-channel MOS-FETElectrical Characteristics (Tunless otherwise specified-CItemI=1mAVVDSSDGSVI=10mA VV2,53,03,5VDD ..
2SK3273-01MR ,N-channel MOS-FETElectrical Characteristics (Tunless otherwise specified-CItemI=1mAVVDSSDGSVI=10mA VV2,53,03,5VDD ..
2SK3273-01MR ,N-channel MOS-FETN-channel MOS-FET6,5m Ω60V±70A> > Outline Drawing----->---DC-DC converters>Maximum Ratings ..
2SK3278 ,N-Channel Silicon MOSFET DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
39-01-2060 , 4.20mm (.165") Pitch Mini-Fit Jr.™ Receptacle Housing, Dual Row, UL 94V-2, 6 Circuits
39-01-2105 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-0, 10 Circuits
39-01-2140 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-2, 14 Circuits
39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
2SK3265
MOSFET 2SK/2SJ Series
TOSHIBA 2SK3265
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (n-MOSV)
25K3265
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS
Unit in mm
CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE
APPLICATIONS
0 Low Drain-Source ON Resistance : RDS(ON) = 0.72 n (Typ.)
0 High Forward Transfer Admittance : Ist| = 7.0 S (Typ.)
0 Low Leakage Current : IDSS = 100 #A (Max.) (VDS = 700V)
0 Enhancement-Mode : Vth = 2.0--4.0 V
(VDS = 10V, ID = 1 mA) 0.75.t0.15
MAXIMUM RATINGS (Ta = 25°C) 2.5tH0.25 2.54f:0.25
CHARACTERISTIC SYMBOL RATING UNIT i2i,=acaa-)e jg
Drain-Source Voltage VDSS 700 V (f,'. 1 2 3 - 3 1 2
Drain-Gate Voltage (RGS = 20 k0) VDGR 700 V l. G ATE
Gate-Source Voltage VGSS i30 V 2. DRAIN 3
Drain Current DC ID 10 A 3. SOURCE
Pulse IDP 30 A JEDEC -
Drain Power Dissipation (Tc = 25°C) PD 45 W EIAJ SC-67
Single Pulse Avalanche Energy** E AS 420 mJ TOSHIB A 2-10RIB
Avalanche Current IAR 10 A
Repetitive Avalanche Energy* E AR 4.5 mJ Weight : 1.9g (Typ.)
Channel Temperature Tch 150 T
Storage Temperature Range Tstg -5r-150 'C
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case Rth(ch-c) 2.78 "C/ W
Thermal Resistance, Channel to Ambient Rth(ch-a) 62.5 "C/ W
Note ;
* Repetitive rating ; Pulse Width Limited by Max. junction temperature.
** VDD = 90V, Tch = 25°C (initial), L = 7.5 mH, RG = 25 Q, IAR = 10A
This transistor is an electrostatic sensitive device.
Please handle with caution.
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1999-11-10 1/5
TOSHIBA 2SK3265
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = -k25 V, VDS = 0 V - - ul-IO PA
Gate-Source Breakdown
= + = + - -
Voltage V(BR)GSS 1G --r10/zA, VDS 0V tM) V
Drain Cut-off Current IDSS VDS = 700 V, VGS = 0V - - 100 PA
Drain-Source Breakdown
Voltage V (BR) DSS ID - 10 mA, VGS - 0 V 700 - - V
Gate Threshold Voltage Vth VDS = 10 V, ID = 1 mA 2.0 - 4.0 V
Drain-Source ON Resistance RDS (ON) VGS = 10 V, ID = 5 A - 0.72 0.75 n
Forward Transfer - -
A dmittance IYfSI VDS - 10V, ID - 5A 4.0 7.0 - S
Input Capacitance Ciss - 1700 -
Reverse Transfer C VDS = 25 V, VGS = 0 V, 40 F
Capacitance rss f = 1 MHz - - p
Output Capacitance Coss - 200 -
Rise Time tr 10 Vn AVOUT - 40 -
GS 0 Vn
Turn-on Time ton - 72 -
Switching - 1L,u, n ns
Time Fall Time tf - 42 -
. VIN : tr, tf < 5 ns, vmr--. -. 200 V 145
Turn-off Time toff Duty s 1%, tw = 10ps - -
Total Gate Charge (Gate-
. Qg . - 53 -
Source Plus Gate-Drain) VDD =. 400 V, VGS = 10 V, C
Gate-Source Charge Qgs ID = 10 A - 25 - n
Gate-Drain ("Miller") Charge di - 28 -
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse
Current IDR - - - 10 A
Pulse Drain Reverse Current IDRP - - - 30 A
Diode Forward Voltage VDSF IDR = 10 A, VGS = 0 V - - -1.9 V
Reverse Recovery Time trr IDR = 10 A, VGS = 0 V - 1400 - ns
Reverse Recovery Charge er dIDR/ dt = 100 A/ gs - 17.5 - PC
MARKING
T X Lot Number
k3265--- TYPE
l I El- Month (Starting from Alphabet A)
U U U Year (Last Number of the Christian Era)
1999-11-10 2/5
TOSHIBA
2SK3265
DRAIN CURRENT
DRAIN CURREN T
FORWARD TRANSFER ADMITTANCE
”H (S)
ID - VDS
COMMON
SOURCE
Tc = 25°C
ID - VDS
COMMON
SOURCE
Tc = 25°C
2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
COMMON
SOURCE
VDS = 20 V
To = -55''C
2 4 6 s 10
GATE-SOURCE VOLTAGE VGS (V)
lstl - ID
COMMON
SOURCE
VDS = 20 V
Te = -55%
3 5 1 10 30 50 100
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS
V - XQHE
Tc=25°C
DRAIN-SOURCE VOLTAGE VDS (V)
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
RDS (ON) - ID
COMMON
SOURCE
5 Tc = 25°C
1 VGS = 10, 15 v
Rns (ON) (0)
DRAIN-SOURCE 0N RESISTANCE
0.1 0.3 0.5 l 3 5 10 30 50
DRAIN CURRENT ID (A)
1999-11-10 3/5
TOSHIBA 2SK3265
RDS(0N) - Te IDR - VDS
383%? 2 COMMON
8 v = 10 v - SOURCE
P; GS ttd Tc = 25°C
Ed 3 E
o 'iii' tD
‘63 2 :2
g g 2 E
E 1 ttt
V = 0, -1 v
0 © GS
-80 -40 0 40 80 120 160 . 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE VDs (V)
CAPACITANCE - VDS Vth - Te
5000 A 5
tt COMMON
3000 Ciss 5 SOURCE
t: > 4 VDS = 10 V
a, ID = 1 mA
1000 8
m 500 5, 3
a 300 >
E F,' 2
'd 100 a
0 COMMON ,.5,.:1,
50 SOURCE fi 1
30 VGS = 0 V F-'
f = 1 MHz 0
Te = 25°C -80 -40 0 40 80 120 160
0.1 0.3 0.5 1 3 5 10 30 50 100 CASE TEMPERATURE Te (T)
DRAIN-SOURCE VOLTAGE VDS (V)
PD - Te DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
COMMON SOURCE
ID = 10 A
Tc = 25°C
400 16
VDS = 100 v
300 12
DRAIN POWER DISSIPATION PD (W)
DRAIN-SOURCE VOLTAGE vDs (V)
GATE-SOURCE VOLTAGE Vcs (V)
0 40 80 120 160 200 O 10 20 30 40 50 60 70 80
CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qg (nC)
1999-11-10 4/5
TOSHIBA
2SK3265
DRAIN CURRENT ID
Duty = 0.5
0.03 0.02
0.01 0.01
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (0’ Rth (ch 0)
10 (l 100 pr l m
PULSE WIDTH tw (s)
SAFE OPERATING AREA
ID MAX. (PULSE) X
ID MAX.
(CONTINUOUS)
DC OPERATION
1 Tc = 25°C
0 05 ik. SINGLE
. NONREPETITIVE PULSE
0.03 Te = 25°C
urves must be derated DSS
early with increase in
mperature.
1 3 10 30 100 300 1000
DRAIN-SOURCE VDS (V)
rth - tw
SINGLE PULSE
AVALANCHE ENERGY EAS (mJ)
Peak IAR-- 10A, RG-- 259 E
VDD-- 90V, L= 7.5mH
PDMII I I I
Duty = t/ T
Rth (ch-c) = 2.78°C/W
100m 1 10
EAS - Teh
50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL) Tch CC)
oh,,lLl A' N
VDD / \ VDs
TEST CIRCUIT WAVE FORM
- l 2 ( BVDSS )
AS - 2 .L.p. BVDSS - VDD
1999-11-10 5/5
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