2SK3236 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive ApplicationsApplications 4 V gate drive Low drain-source ON resistance: R = 13.5 mΩ (typ.) DS (ON) H ..
2SK3262 ,N-CHANNEL SILICON POWER MOS-FETApplications Switching regulators 2.54 UPS (Uninterruptible Power Supply)3. Source DC-DC ..
2SK3262-01MR ,N-CHANNEL SILICON POWER MOS-FETFeatures High speed switching Low on-resistance No secondary breadown Low driving power ..
2SK3264-01MR ,POWER MOSFETThis material and the Information herein la the property of
Fuji Electnc Co.,Ltd.They shall be nei ..
2SK3264-01MR ,POWER MOSFETThis material and the Information herein la the property of
Fuji Electnc Co.,Ltd.They shall be nei ..
2SK3265 ,MOSFET 2SK/2SJ SeriesAPPLICATIONS_1010.3 ' (#32102 2,7ur0.20 Low Drain-Source ON Resistance : RDS(ON) = 0.72 fl (Typ.)0 ..
39-01-2060 , 4.20mm (.165") Pitch Mini-Fit Jr.™ Receptacle Housing, Dual Row, UL 94V-2, 6 Circuits
39-01-2105 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-0, 10 Circuits
39-01-2140 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-2, 14 Circuits
39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
2SK3236
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 60 V) Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V , ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devises on condition that the channel temperature is below 150°C.
Note 2: VDD � 50 V, Tch � 25°C, L � 40 �H, RG � 25 �, IAR � 35 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution
Unit: mm
Weight: 1.9 g (typ.)
