2SK3205 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator Applications DC .DC Converter, and Motor Drive ApplicationsApplications 4 V gate drive Low drain−source ON resistance : R = 0.36 Ω (typ.) DS (ON)High ..
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39-01-2060 , 4.20mm (.165") Pitch Mini-Fit Jr.™ Receptacle Housing, Dual Row, UL 94V-2, 6 Circuits
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39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
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2SK3205
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator Applications DC .DC Converter, and Motor Drive Applications
2SK3205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSV)
2SK3205 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 150 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 125
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.2 mH, IAR = 5 A, RG = 25 Ω,
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)
